| 发明名称 |
Simplified method of patterning polysilicon gate in a semiconductor device |
| 摘要 |
Polysilicon gates are formed with greater accuracy and consistency by depositing an antireflective layer, e.g., amorphous silicon, on the polysilicon layer before patterning. Embodiments also include depositing the polysilicon layer and the amorphous silicon layer in the same tool.
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| 申请公布号 |
US6107167(A) |
申请公布日期 |
2000.08.22 |
| 申请号 |
US19990366216 |
申请日期 |
1999.08.02 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BHAKTA, JAYENDRA D. |
| 分类号 |
H01L21/28;H01L21/3213;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
| 代理机构 |
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