| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a silicon thin film photoelectric conversion device of a structure, wherein the photoelectric conversion characteristics of the device are improved by the light confinement effect without causing a reduction in an open-end voltage and a reduction in the yield of the production of the device. SOLUTION: A silicon thin film photoelectric conversion device has a transparent electrode 10, a photoelectric conversion unit 11 comprising a layer 111 of one conductivity type, a crystalline silicon photoelectric conversion layer 112 and a layer 113 of the opposite conductivity type, and a light reflecting metallic electrode 202 which hare laminated in order on a substrate 1. The electrode 10 is formed into a surface roughness structure, a difference in the unevenness of the recesses and projections of the surface of the electrode 10 is 10 to 100 nm and the pitch between the recesses and projections is wider than the difference in the unevenness of the recesses and projections and is 25 times narrower than the difference.</p> |
