| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor structure, wherein damage to a base at the time of the formation of a contact is suppressed without complicating the manufacturing process of the image sensor structure, and the manufacturing method of the structure. SOLUTION: In an image sensor having a first interlayer film which covers a thin film transistor part, and a recessed interlayer film 11 which covers the first interlayer film and a light-receiving element part, the first and second interlayer films are respectively constituted of different materials. After the second interlayer film on a contact formation part in the thin film transistor part consisting of a polysilicon film is at least removed, a contact is formed. |
