| 摘要 |
PROBLEM TO BE SOLVED: To suppress the interface state density in a laser edge face by a method wherein elements constituting a plurality of passivation layers of a semiconductor light-emitting element are selected according to specified conditions. SOLUTION: As materials which are inserted in the interface between a laser edge face and a dielectric material as a passivation layer 14, specially passivation layers 14-1, when a diffusion of elements is caused during a long-period drive of a laser, specially during the high-output operation of the laser, the elements, which are introduced in an active layer 4 or the like as N-type impurities and cause an effective reduction in a hole concentration due to a compensation effect, are desirable. That is, Si and the like, which augment a band gap, wherein parts of the elements in the layer 14 are diffused with a drive of an LD, in the vicinity of the semiconductor laser edge face and make absorption of light in the laser edge face inhibit, are desirable. On the other hand, as the elements which are adhered to the layers 14-1 or second passivation layers 14-2, elements having the absolute value of an oxide production enthalpy higher than that of the elements constituting the layers 14-1, Sc and the like are used. Thereby, the interface state density in the laser edge face can be stably suppressed extending over a long period. |
