| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for inspecting a semiconductor device in which defect information to be obtained is decreased. SOLUTION: Inspection method of semiconductor device comprises a step for condensing an electron beam 2 emitted from an electron gun 1 through a condenser lens 3, a step for passing the electron beam through a deflection coil 5 while limiting the divergence angle through a stop 4 before scanning through a scan deflector 6, a step for focusing the scanned electrons onto a sample 9 through an objective lens 7, a step for detecting secondary electrons generated by irradiating the sample 9 with electrons by means a secondary electron detector 8 and amplifying the secondary electrons, and a step for obtaining a scan image by taking a signal from the secondary electron detector 8 into a computer 11 in synchronism with a scan signal delivered from the scan deflector 6 wherein inspection is effected while deteriorating the image quality of a fine structure having irregularities.
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