| 摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam exposure device capable of detecting an alignment mark and an inspection mark of high SN ratio. SOLUTION: The charged particle beam exposure device comprises a reflecting electron detector 19 for detecting a reflecting electron beam from a mark 15a or the like on a surface of a wafer 15 and a stage 17 for moving a wafer 16 at least in one direction. The detector 19 has a detecting surface 19a arranged in plane in a periphery of an electron beam passing aperture 19c, and the aperture 19c has a shape corresponding to a band-shaped irradiation area. Many of reflecting electrons from the mark or the like on the wafer can be captured and SN ratio of a signal is improved. Therefore, time for detection is shortened and total throughput of the exposure device is improved.
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