发明名称 |
Apparatus for photolithography process with gas-phase pretreatment |
摘要 |
The present invention discloses an apparatus for photolithography process with phase-pretreatment. The apparatus comprises several chambers: a vapor prime chamber, a vacuum-bake chamber, a chill-plate chamber, a coater chamber and a stepper chamber. Further, an interface chamber is between the stepper chamber and the apparatus. These chambers are connected together to a track system. A base gas is introduced into one of these chambers to perform a gas-phase pretreatment. The concentration of the base gas can be controlled and the processing time of the pretreatment process is well controlled by operating the apparatus. As a photoresist layer is applied on a substrate, the photoresist layer is hardened in the base gas to increase the depth of focus in photolithography process.
|
申请公布号 |
US6106167(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19980144967 |
申请日期 |
1998.09.01 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
GAO, TSAI-SHENG;GOANG, DONG-YUAN |
分类号 |
H01L21/027;G03F7/16;G03F7/38;H01L21/00;(IPC1-7):G03D7/00;G03D5/00 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|