发明名称 Apparatus for photolithography process with gas-phase pretreatment
摘要 The present invention discloses an apparatus for photolithography process with phase-pretreatment. The apparatus comprises several chambers: a vapor prime chamber, a vacuum-bake chamber, a chill-plate chamber, a coater chamber and a stepper chamber. Further, an interface chamber is between the stepper chamber and the apparatus. These chambers are connected together to a track system. A base gas is introduced into one of these chambers to perform a gas-phase pretreatment. The concentration of the base gas can be controlled and the processing time of the pretreatment process is well controlled by operating the apparatus. As a photoresist layer is applied on a substrate, the photoresist layer is hardened in the base gas to increase the depth of focus in photolithography process.
申请公布号 US6106167(A) 申请公布日期 2000.08.22
申请号 US19980144967 申请日期 1998.09.01
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 GAO, TSAI-SHENG;GOANG, DONG-YUAN
分类号 H01L21/027;G03F7/16;G03F7/38;H01L21/00;(IPC1-7):G03D7/00;G03D5/00 主分类号 H01L21/027
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