发明名称 Load actuating semiconductor circuit having a thermally resistive member
摘要 An intelligence power device (IPD), having a temperature-sensitive and heat-damage protecting function, is used as a semiconductor relay which controls load current supplied to an electric load. A target sensitive temperature TSD of IPD is determined according to an allowable load current value, using an equation TSD=I2xRONxRTEMP+TROOM, where I represents an allowable load current value, RON represents an on-resistance value of a power MOSFET, RTEMP represents a thermal resistance value of an entire radiation system of IPD, and TROOM represents an ambient temperature of IPD. When the load current exceeds the allowable load current value, IPD stops the load current so that the load circuit can be prevented from being subjected to excessively large current.
申请公布号 US6107669(A) 申请公布日期 2000.08.22
申请号 US19970000851 申请日期 1997.12.30
申请人 ANDEN CO., LTD. 发明人 MOKUYA, HIROFUMI;TANIGUCHI, MUTUO
分类号 H01L23/58;B60R16/02;H01L23/34;(IPC1-7):H01L23/62 主分类号 H01L23/58
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