| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving reliability of the device without risks of damaging a ceramic surface of a circuit board at a connecting part of a conductive member. SOLUTION: The semiconductor device comprises a circuit board 11 made of an aluminum nitride, a conductive layer 12 made of a copper connected by an active metal method using a metal brazing material 14 containing silver and titanium as main components on a surface of the board 11, and a conductive member 15 made of copper connected by an ultrasonic welding using an ultrasonic vibration of 40 kHz on a surface of the layer 12. Thus, there are no risks of giving damages on the ceramic surface of the board 11 of a part connected with the conductive member to improve effects such as reliability of the device, a manufacturing yield or the like. |
