| 摘要 |
A thin film transistor (TFT) and a method for fabricating the same utilize a sidewall spacer and a trench to improve the reliability of the device. The TFT includes a substrate, a trench formed in the substrate, and an active layer formed on the substrate and in the trench. A sidewall spacer is formed on the active layer along at least one side of the trench. A gate insulating film is formed over the sidewall spacer and the active layer. A gate electrode is formed on the gate insulating film in the trench. Source and drain electrodes are formed in the active layer or opposite sides of the gate electrode.
|
