Method of making high performance transistors using channel modulated implant for ultra thin oxide formation

摘要

The present invention is directed to a semiconductor device having an ultra thin gate oxide and a method for making same. The method is comprised of implanting nitrogen into a region of a semiconducting substrate, and forming a gate dielectric above the region in the substrate. The method further comprises forming a gate conductor above the gate dielectric and forming at least one source/drain region. The present invention is also directed to a transistor having a gate dielectric positioned above a surface of a semiconducting substrate, the gate dielectric being comprised of a nitrogen bearing oxide having a nitrogen concentration ranging from approximately 4-8%. The transistor further comprises a gate conductor positioned above the gate dielectric and at least one source/drain region.