发明名称 |
Passivation photoresist stripping method to eliminate photoresist extrusion after alloy |
摘要 |
A method for stripping positive photoresist from a keyhole 17 in a passivation layer 18 before a heating process using NMP solvent strips after a photoresist strip. The process is summarized by the 5 steps as follows: (1) Photoresist strip 1 (e.g., EKC 830), (2) Photoresist strip 2 (e.g., EKC 830 photoresist stripper), (3) N-methly-2-pyrolidone (NMP) solvent strip-agitated (solvent is preferably the same solvent in the photoresist stripper (1 &2) (4) NMP solvent strip-agitated and (5) H2O rinse. The NMP solvent strip steps (3) and (4) remove photoresist residue (16, FIG. 1) in the key hole 17. This prevents the formation of photoresist extrusions 24 while annealing the metal lines 14.
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申请公布号 |
US6107202(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19980152349 |
申请日期 |
1998.09.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHIU, CHIH-KANG;PAN, SHENG-LIANG |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/308 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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