| 摘要 |
An ion source (50) for an ion implanter is provided, comprising: (i) a sublimator (52) having a cavity (66) for receiving a source material (68) to be sublimated and for sublimating the source material; (ii) an ionization chamber (58) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; (iii) a feed tube (62) for connecting the sublimator (52) to the ionization chamber (58); and (iv) a heating medium (70) for heating at least a portion of the sublimator (52) and the feed tube (62). A control mechanism is provided for controlling the temperature of the heating medium (70). The control mechanism comprises a heating element (80) for heating the heating medium (70), a pump (55) for circulating the heating medium, at least one thermocouple (92) for providing temperature feedback from the heating medium (70), and a controller (56) responsive to the temperature feedback to output a first control signal (94) to the heating element.
|
