| 摘要 |
A method of manufacturing a semiconductor device, which is designed to enhance the characteristic of a dual-gate MOS by reducing the phase difference between two gate electrodes, includes the steps of: forming a first conductivity type substrate in which a portion to be first and second gate electrodes are defined; sequentially forming a gate insulating layer and a conductive coating on the substrate; ion-implanting first conductivity type impurities into the conductive coating of a portion where the first gate electrode will be formed; ion-implanting second conductivity type impurities into the conductive coating of a portion where the second gate electrode will be formed; selectively etching the conductive coating, leaving only a portion doped with the first and second conductivity type impurities, and forming the first and second gate electrodes; and forming impurity regions in the surface of the substrate on both sides of the first and second gate electrodes.
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