发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
Since a field effect MOS transistor can be formed with a reduced number of manufacturing processes, a semiconductor integrated circuit device can be materialized at a low cost. A semiconductor device has a structure in which a gate electrode is provided in the vicinity of the surface of a semiconductor substrate through a gate insulating film, a second conductive type heavily doped impurity region is provided in a region adjacent to a part of the gate electrode through a part of the gate insulating film and a part of a thick oxide film, another second conductive type heavily doped impurity region is provided in a region adjacent to an opposite part of the gate electrode opposing the part of the gate electrode through the part of the gate insulating film and a part of another thick oxide film, and a first conductive type heavily doped impurity region for device isolation is provided so as to surround the gate electrode and the second conductive type heavily doped impurity regions.
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申请公布号 |
US6107128(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19990324693 |
申请日期 |
1999.06.02 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
ISHII, KAZUTOSHI;GOTOU, SUMITAKA;MOYA, YASUHIRO;KITTA, TATSUYA;KANAKUBO, YOSHIHIDE |
分类号 |
H01L29/78;H01L21/8238;H01L27/092;(IPC1-7):H01L21/823 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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