发明名称 FAIL INFORMATION TAKE-IN DEVICE, TEST DEVICE FOR SEMICONDUCTOR MEMORY, AND ANALYZING METHOD FOR SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To suppress required memory quantity and to enable shortening a relieving and analyzing time to a semiconductor memory. SOLUTION: This information take-in device 60 is provided with an address selecting section 602 and a memory control section 604 to which defective cell discrimination information is inputted, a memory 606 storing defective cell specifying information which specifies a memory cell indicated by defective cell discriminating information, a block fail memory(BFM) 612 storing block specific information indicating a relieving block to which a memory cell indicated by defective cell discriminating information belongs, a subblock fail memory(SBFM) address selecting section 610 outputting sub- block discrimination information indicating a sub-block to which a memory cell indicated by defective cell discriminating information belongs, a fail information take-in control section 616 detecting whether a memory cell indicated by defective cell discrimination information belongs to a main cell part or nor, and a SBFM(sub-block fail memory) 614 storing sub-block specific information indicating sub-block indicated by sub-block discrimination information when a defective memory cell belongs to a main cell part.
申请公布号 JP2000231798(A) 申请公布日期 2000.08.22
申请号 JP19990282187 申请日期 1999.10.01
申请人 ADVANTEST CORP 发明人 SATOU SHINYA
分类号 G01R31/28;G11C29/00;G11C29/44;(IPC1-7):G11C29/00 主分类号 G01R31/28
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