| 摘要 |
PROBLEM TO BE SOLVED: To effectively and efficiently perform heat treatment of a semiconductor device for hydrogenation without exposing a semiconductor substrate newly after all layers are formed by arranging respective wiring layers on places other than the upper part of a gate of a long channel transistor. SOLUTION: A long channel transistor 120 and a first interlayer insulation layer 131 are provided on a semiconductor substrate 110. Next, a first wiring layer 141 is provided and the wiring pattern thereof is arranged on places other than the upper part of a gate 121 of the transistor 120. Further, a second interlayer insulation film 132, a second wiring layer 142 and a third interlayer insulation layer 133 are formed successively, and the wiring pattern of the second wiring layer 142 is also arranged on places other than the upper part of the gate 121 in the same way as the first wiring layer 141. Thus, a semiconductor device 100 laminated with respective layers is hydrogenated.
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