| 发明名称 |
Semiconductor light emitting device and method of manufacturing the same |
| 摘要 |
A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal-yAs (0.6</=y</=0.8) auto-doped in a carrier concentration of 5x1018-3x1019 cm-3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.
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| 申请公布号 |
US6107647(A) |
申请公布日期 |
2000.08.22 |
| 申请号 |
US19980079260 |
申请日期 |
1998.05.15 |
| 申请人 |
ROHM CO. LTD. |
发明人 |
MATSUMOTO, YUKIO;NAKATA, SHUNJI;SHAKUDA, YUKIO |
| 分类号 |
H01L33/02;H01L33/14;H01L33/30;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/02 |
| 代理机构 |
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