发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND DATA BUS RESET METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of accelerating operating speed and reducing power consumption. SOLUTION: A reset circuit 11 is provided with first and second reset circuit sections 11a and 11b and a control section 11c. The section 11c operates the section 11a prior to a write operation to a memory cell and operates the section 11b before a read operation. The section 11a conducts a reset operation making a first potential of an intermediate level (Vdd/2) of a high potential side power supply Vdd as a precharge potential. The section 11b conducts a reset operation making a second potential of the power supply Vdd level as a precharge potential.
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申请公布号 |
JP2000231791(A) |
申请公布日期 |
2000.08.22 |
申请号 |
JP19990197401 |
申请日期 |
1999.07.12 |
申请人 |
FUJITSU LTD;FUJITSU VLSI LTD |
发明人 |
SUGAMOTO HIROYUKI;FURUYAMA TAKAAKI |
分类号 |
G11C11/409;G11C7/10;G11C11/407;G11C11/4096;(IPC1-7):G11C11/409 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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