发明名称 SEMICONDUCTOR MEMORY DEVICE AND DATA BUS RESET METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of accelerating operating speed and reducing power consumption. SOLUTION: A reset circuit 11 is provided with first and second reset circuit sections 11a and 11b and a control section 11c. The section 11c operates the section 11a prior to a write operation to a memory cell and operates the section 11b before a read operation. The section 11a conducts a reset operation making a first potential of an intermediate level (Vdd/2) of a high potential side power supply Vdd as a precharge potential. The section 11b conducts a reset operation making a second potential of the power supply Vdd level as a precharge potential.
申请公布号 JP2000231791(A) 申请公布日期 2000.08.22
申请号 JP19990197401 申请日期 1999.07.12
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 SUGAMOTO HIROYUKI;FURUYAMA TAKAAKI
分类号 G11C11/409;G11C7/10;G11C11/407;G11C11/4096;(IPC1-7):G11C11/409 主分类号 G11C11/409
代理机构 代理人
主权项
地址
您可能感兴趣的专利