发明名称 |
METHOD FOR FORMING TUNGSTEN PLUG |
摘要 |
PROBLEM TO BE SOLVED: To provide a tungsten plug forming method by which the reliability of a tungsten plug can be improved ideally by forming sufficiently thick tungsten films in via holes. SOLUTION: In a state such that an insulating layer 20 is formed on lower- layer wiring 10 and via holes 30 for connecting upper-layer wiring 50 which is planed to be formed on the insulating layer 20 to the lower-layer wiring 10 are formed into the insulating layer 20, a tungsten film 40 is formed on the insulating layer 20 including the via holes 30 by the CVD method, and a series of treatment for etching the tungsten film 40 to the surface of the insulating layer 20 or its vicinity is repeated.
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申请公布号 |
JP2000232161(A) |
申请公布日期 |
2000.08.22 |
申请号 |
JP19990034336 |
申请日期 |
1999.02.12 |
申请人 |
ASAHI KASEI MICROSYSTEMS KK |
发明人 |
TANI KENJI |
分类号 |
H01L21/768;H01L21/28;H01L21/285;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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