发明名称 METHOD FOR FORMING TUNGSTEN PLUG
摘要 PROBLEM TO BE SOLVED: To provide a tungsten plug forming method by which the reliability of a tungsten plug can be improved ideally by forming sufficiently thick tungsten films in via holes. SOLUTION: In a state such that an insulating layer 20 is formed on lower- layer wiring 10 and via holes 30 for connecting upper-layer wiring 50 which is planed to be formed on the insulating layer 20 to the lower-layer wiring 10 are formed into the insulating layer 20, a tungsten film 40 is formed on the insulating layer 20 including the via holes 30 by the CVD method, and a series of treatment for etching the tungsten film 40 to the surface of the insulating layer 20 or its vicinity is repeated.
申请公布号 JP2000232161(A) 申请公布日期 2000.08.22
申请号 JP19990034336 申请日期 1999.02.12
申请人 ASAHI KASEI MICROSYSTEMS KK 发明人 TANI KENJI
分类号 H01L21/768;H01L21/28;H01L21/285;(IPC1-7):H01L21/768 主分类号 H01L21/768
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