| 摘要 |
PROBLEM TO BE SOLVED: To make divided patterns on a mask link together on a wafer, with high accuracy. SOLUTION: A mask stage speed|Vm|, a wafer stage speed|Vw|, and the absolute value of a beam deflection amount|ΔS|are determined (step 101). Whether a stripe number is even, number is discriminated (step 108). Then on the basis of the discrimination result, the mask stage, the wafer stage and the deflecting direction of a wafer deflecting system are set (steps 109, 110). The wafer stage and the mask stage start continuous movement (step 113), and divided patterns are exposed to light (steps 115-119). Whether all the divided pattern have been exposed is discriminated (step 120). If not all the divided patterns are exposed, the deflection amount on a wafer which corresponds to the beam width on a mask is added (step 121), and the next divided pattern is exposed.
|
