Method for making a mushroom shaped DRAM capacitor

摘要

A method of forming a capacitor for a DRAM memory cell is disclosed. The method comprises the steps of forming a crown shaped capacitor being partially filled with oxide. Next, nitride spacers and polysilicon spacers are formed on the sides of crown capacitor. The remaining oxide is removed and then the oxide spacers are removed to leave a mushroom shaped bottom storage node. A dielectric is deposited and a top conductive node is deposited to complete the capacitor.