Negative resist materials, pattern formation method making use thereof, and method of manufacturing semiconductor devices

摘要

A negative resist material suitable for lithography employing for exposure a beam having a wavelength of 220 nm or less. The negative resist material contains a polymer having a weight average molecular weight of 1,000-500,000 and represented by the following formula (1): wherein R1, R3, and R5 are hydrogen atoms or methyl groups; R2 is a specified divalent hydrocarbon group; R4 is a hydrocarbon group having an epoxy group; R6 is a hydrogen atom or a C1-12 hydrocarbon group; and each of x, y, and z represents an arbitrary number satisfying certain relations; a photoacid generator generating an acid through exposure; and optionally a polyhydric alcohol or a polyfunctional epoxy group. The present invention also discloses a pattern formation method, and a method of manufacturing semiconductor devices using the pattern formation method.