| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the manufacturing method of a quantum wire, which enhances the flatness of the surface of a silicon film subsequent to the formation of the quantum wire and can form the quantum wire having a complete electron confinement region with good controllability, and a semiconductor element having the quantum wire. SOLUTION: A semiconductor substrate 1 formed with a step 2 is etched back using the region of a nitride film 3 covering the substrate 1 as a mask and the upper side part of the substrate 1 is made to expose. Then an oxide film 5 is formed on the substrate 1 by oxidizing the exposed region of the upper side part of the substrate 1, and a linear projection part 6 is formed along the side surfaces of the film 3. Then one part of an oxide film 5 on the projection part 6 is etched to make the point of the projection part 6 expose. Then a thin wire part 7 is epitaxially grown on the exposed region of the point of the projection part 6. After the above films 3 and 5 are removed, a quantum wire 7a separately insulated from the substrate 1 is formed of an oxide film 5A formed by an oxidation of the substrate 1.</p> |
