| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent damages to a substrate during bonding in advance and improve a manufacturing yield of semiconductor device by arranging a bump working the essential function of the semiconductor device in an area for forming semiconductor devices or its peripheral area. SOLUTION: Impurities 10 with a specified polarity are heavily doped into an area for forming a stress releasing bump around a semiconductor substrate 1. A seed layer 5 which is laminated with a TiW alloy layer for enhancing adhesion between an Al electrode and a bump, Au and Pt layers for supplying power, etc., is vapor-deposited onto the semiconductor substrate 1 by sputtering. Next, a photoresist 6 is applied, and an electrode part and a stress releasing bump are drilled for plating. A metal for bump is plated thick by the electrolytic plating method. The formed bumps are a bump 8 on the Al electrode 3 and a stress releasing bump 7. Further, the photoresist 6 is removed and the seed layer 5 on the surface is removed, obtaining a semiconductor device 12.</p> |
