发明名称 METHOD FOR CORRECTING SCATTERING STENCIL TYPE RETICLE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for correcting a scattering stencil type reticle capable of obtaining a reticle having high electron beam scatterability. SOLUTION: This method consists of correcting a defect generated when manufacturing the reticle which has pattern transferred parts composed of an electron beam scattering body and is used for transfer of a reduction stepped transfer image to a substrate to be transferred. A defective part is removed by irradiating the defective part with charge particles beam while supplying a gas containing at least a halogen-base compound.</p>
申请公布号 JP2000231186(A) 申请公布日期 2000.08.22
申请号 JP19990031024 申请日期 1999.02.09
申请人 NIKON CORP 发明人 SHIMIZU SUMUTO
分类号 H01L21/027;G03F1/20;(IPC1-7):G03F1/16 主分类号 H01L21/027
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