发明名称 CHARGE PUMP CIRCUIT, ITS DRIVE METHOD, AND VOLTAGE CONVERSION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To obtain a charge pump circuit that can improve booster efficiency. SOLUTION: In a first booster stage 1, an external power voltage Vcc is supplied via a first gate transistor T11. The first booster stage 11 is connected to a second one 12 via a second gate transistor T12. Also, the second booster stage 12 outputs an internal power supply voltage Vout via a third gate transistor T13. Each of other end of the first and second booster stages 11 and 12 is connected to each drive circuit 21. A bypass transistor TB is connected between the second and third gate transistors T12 and T13. The bypass transistor TB are turned on and off by the drive circuit 21 with the third gate transistor T13, thus carrying out single-stage booster pumping operation using a fist booster stage 1.
申请公布号 JP2000232773(A) 申请公布日期 2000.08.22
申请号 JP19990034128 申请日期 1999.02.12
申请人 FUJITSU LTD;FUJITSU VLSI LTD 发明人 KOBAYASHI ISAMU;KATO KOJI
分类号 G11C5/14;G11C11/407;H02M3/07;(IPC1-7):H02M3/07 主分类号 G11C5/14
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