Semiconductor memory device

摘要

A nonvolatile memory semiconductor memory device is disclosed which incorporates fuse-cells in which data for setting a mode and redundancy data are stored. The nonvolatile memory semiconductor memory device incorporates a fuse-cell circuit including fuse-cells, a fuse-cell controlling circuit for reading data stored in the fuse-cell, a voltage boosting circuit for generating a boosted voltage and a voltage converting circuit which uses a reference voltage to convert the boosted voltage into read voltage for use when data is read from the fuse-cell. The reference voltage is generated by using a threshold voltage of a reference cell having the same structure as that of the fuse-cell.