发明名称 |
Semiconductor memory device |
摘要 |
A nonvolatile memory semiconductor memory device is disclosed which incorporates fuse-cells in which data for setting a mode and redundancy data are stored. The nonvolatile memory semiconductor memory device incorporates a fuse-cell circuit including fuse-cells, a fuse-cell controlling circuit for reading data stored in the fuse-cell, a voltage boosting circuit for generating a boosted voltage and a voltage converting circuit which uses a reference voltage to convert the boosted voltage into read voltage for use when data is read from the fuse-cell. The reference voltage is generated by using a threshold voltage of a reference cell having the same structure as that of the fuse-cell.
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申请公布号 |
US6108246(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19990391153 |
申请日期 |
1999.09.08 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
UMEZAWA, AKIRA;SHIGA, HITOSHI;BANBA, HIRONORI;ATSUMI, SHIGERU |
分类号 |
G11C11/413;G11C5/14;G11C7/10;G11C16/06;G11C16/30;G11C29/04;H01L21/82;H01L21/822;H01L27/04;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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