| 发明名称 |
Semiconductor device manufacturing method |
| 摘要 |
The semiconductor device manufacturing method includes the step of forming a second tungsten film on a first tungsten film, which is formed by using a reduction gas not-containing diborane, by using a gas containing the diborane, or forming the second tungsten film on the first tungsten film after the first tungsten film has been exposed to the gas containing the diborane.
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| 申请公布号 |
US6107200(A) |
申请公布日期 |
2000.08.22 |
| 申请号 |
US19990265399 |
申请日期 |
1999.03.10 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
TAKAGI, HIDEO;IIO, HIROKI;OTA, YUZURU |
| 分类号 |
H01L21/3205;C23C16/14;H01L21/28;H01L21/285;H01L21/768;H01L23/52;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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