发明名称 Method for removing photoresist
摘要 A method for removing a photoresist. A substrate having a wire on the substrate and a flowable oxide layer over the substrate and a patterned photoresist over the flowable oxide layer is provided. A plasma etching step is performed by using an additional gas mixed with oxygen as a source to remove the photoresist layer.
申请公布号 US6107205(A) 申请公布日期 2000.08.22
申请号 US19990246737 申请日期 1999.02.08
申请人 UNITED SEMICONDUCTOR CORP. 发明人 YU, CHIA-CHIEH
分类号 H01L21/3105;H01L21/311;(IPC1-7):H01L21/311 主分类号 H01L21/3105
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