发明名称 |
Method for removing photoresist |
摘要 |
A method for removing a photoresist. A substrate having a wire on the substrate and a flowable oxide layer over the substrate and a patterned photoresist over the flowable oxide layer is provided. A plasma etching step is performed by using an additional gas mixed with oxygen as a source to remove the photoresist layer.
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申请公布号 |
US6107205(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19990246737 |
申请日期 |
1999.02.08 |
申请人 |
UNITED SEMICONDUCTOR CORP. |
发明人 |
YU, CHIA-CHIEH |
分类号 |
H01L21/3105;H01L21/311;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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