| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a thin film solar cell comprising a crystalline silicon film of a low metallic element concentration by a method wherein a semiconductor layer formed on a substrate is crystallized using the single substances of nickel, iron, cobalt and platinum or those single substances and a silicon compound and at the same time, a disused catalyst material after the crystallization is removed from the semiconductor layer to reduce the concentration in the semiconductor layer. SOLUTION: A silicon oxide film 102 and an amorphous silicon film 103 are formed on a glass substrate 101 and thereafter, the substrate is dipped into a hydrogen peroxide ammonia and an oxide film is formed on the surface of the film 103. A nickel salt acetate solution is applied on the surface of the film 103 by a spin-coating method. Hydrogen in the film 103 is made to desorb from the film 103 in a nitrogen atmosphere. The film 103 is heating-treated for 4 to 8 hours at a temperature of 550 deg.C in a nitrogen atmosphere and a crystalline silicon film 104 is formed. Then a phosphosilicate glass(PSG) film 105 is formed on the film 104 at a temperature of 450 deg.C. After the formation of the PSG film 105, it is heating-treated in a nitrogen atmosphere for 1 to 4 hours at a heat-treating temperature of 500 to 800 deg.C, preferably 550 deg.C.</p> |
