| 摘要 |
PURPOSE:To obtain a polysilicon thin film at a low temperature while grain size is being controlled, and to contrive reduction in cost by a method wherein the polysilicon thin film is formed on a substrate which is polished by silicon powder. CONSTITUTION:A polysilicon thin film is formed on a glass substrate in a grain shape controlled state. The control of grain shape is conducted in such a manner that the glass substrate or the transparent electrode or the metal electrode formed on the glass substrate is polished by silicon powder. At this time, the grain diameter of 1000Angstrom to 100mum is considered desirable. Then, pertaining to the forming method for polysilicon thin film on a glass substrate 3, amorphous silicon is deposited on the side of an RF electrode 4, and the polysilicon film is obtained by repeating annealing on the side of an ECR device 5 using hydrogen atoms. |
