| 摘要 |
<p>Issues: A device and method for heat-treating a wafer which can restrain a stress to be caused by the self-weight of a wafer when the wafer is increased in diameter and in treating temperature, which can be less susceptible to a thermal stress effect, and which can prevent slippage at contact portions between the wafer and a wafer boat when heat-treated in a vertical diffusion furnace and a vertical vapor growth furnace to eliminate effects on device characteristics by the slippage and significantly enhance a yield of the device. Solutions: A wafer boat (3) for a vertical furnace which disposes a plurality of vertical columns (4), and which places wafers (2) respectively on generally planar column supports (41) provided at preset intervals at these columns (4), wherein columns (4b, 4c) in the front-most row in a wafer receiving direction have a bow shape or partially bow shape at the cross-sections of column bodies (40b, 40c), and the column supports (41b, 41c) are provided at the front ends of the column bodies (40b, 40c) in the wafer receiving direction.</p> |
