| 摘要 |
<p>The invention relates to a method and an installation for forming a deposit on a substrate (1) wherein the substrate is brought into contact with a gas treatment atmosphere in order to carry out said deposit, whereby the gas treatment atmosphere is obtained from a primary (7) gas treatment mixture comprising excited or unstable types of gas and which is obtained as the gas exits from an excited or unstable (4) gas type forming device and an adjacent gas treatment mixture comprising at least one gas precursor required (41) to form said deposit, whereby the adjacent mixture is not transported via said device. The invention is characterized in that the adjacent gas treatment mixture is injected into the flow of the primary gas mixture obtained when the gas exits from the device.</p> |
