| 摘要 |
<p>An integrated circuit device having a barrier film easily planarizable and a Cu wiring. The integrated circuit device having a Cu wiring layer, its barrier film, and an insulating film is characterized in that the composition of the barrier film is expressed by TaOxNy where 0<x<2.5 and 0<y<1, or in that the composition of the barrier film is expressed by a compositional formula Ta1-aMaObNc (where M is at least one kind selected from a group consisting of Group 3, 4, 6, 7, 8, 9, 10, 12, 13, and 14 elements in the long-form periodic table; 0<a<1; 0<b<2.5; and 0<c<1).</p> |
| 申请人 |
ASAHI GLASS COMPANY, LIMITED;SEIMI CHEMICAL CO., LTD.;MITSUI, AKIRA;HAYASHI, ATSUSHI;MATSUMOTO, KIYOSHI;NISHIMURA, HIROMICHI;SANADA, YASUHIRO;NOSHIRO, MAKOTO;SUNAHARA, KAZUO |
发明人 |
MITSUI, AKIRA;HAYASHI, ATSUSHI;MATSUMOTO, KIYOSHI;NISHIMURA, HIROMICHI;SANADA, YASUHIRO;NOSHIRO, MAKOTO;SUNAHARA, KAZUO |
