MULTILAYER STRUCTURE WITH CONTROLLED INTERNAL STRESSES AND METHOD FOR MAKING SAME
摘要
The invention concerns a multilayer structure with controlled internal stresses comprising successively: a first main layer (110a), at least a first stress-adapting layer (130) in contact with the first main layer, at least a second stress-adapting layer (120) placed in contact by adherence with said first stress-adapting layer and a second main layer (110b) in contact with the second stress-adapting layer, the first and second stress-adapting layers having contact stresses with the first and second main layers. The invention is useful for electronic circuits and diaphragm devices.
申请公布号
WO0048238(A1)
申请公布日期
2000.08.17
申请号
WO2000FR00308
申请日期
2000.02.09
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE;SOITEC;MORICEAU, HUBERT;RAYSSAC, OLIVIER;CARTIER, ANNE-MARIE;ASPAR, BERNARD
发明人
MORICEAU, HUBERT;RAYSSAC, OLIVIER;CARTIER, ANNE-MARIE;ASPAR, BERNARD