发明名称 MULTILAYER STRUCTURE WITH CONTROLLED INTERNAL STRESSES AND METHOD FOR MAKING SAME
摘要 <p>The invention concerns a multilayer structure with controlled internal stresses comprising successively: a first main layer (110a), at least a first stress-adapting layer (130) in contact with the first main layer, at least a second stress-adapting layer (120) placed in contact by adherence with said first stress-adapting layer and a second main layer (110b) in contact with the second stress-adapting layer, the first and second stress-adapting layers having contact stresses with the first and second main layers. The invention is useful for electronic circuits and diaphragm devices.</p>
申请公布号 WO2000048238(A1) 申请公布日期 2000.08.17
申请号 FR2000000308 申请日期 2000.02.09
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