| 摘要 |
<p>A method of the present invention for polishing a semiconductor wafer which inhibits flatness degradation of the wafer caused by polishing comprises simultaneously rough polishing front and back surfaces of the wafer using a polishing slurry while controlling polishing parameters so that the front and back surfaces of the wafer deviate from flatness by becoming generally concave. The front side of the wafer is then subjected to a finish polishing operation using a finish polishing slurry such that the front surface of the wafer becomes highly reflective. The concavity of the front and back surfaces is substantially reduced as a result of finish polishing.</p> |
