| 摘要 |
<p>Processes for producing tungsten nitride and tungsten nitride films in which a tungsten carbonyl compound and a nitrogen-containing reactant gas are reacted at a temperature below about 600 °C. Tungsten nitride precursors are also included which comprise a tungsten carbonyl compound capable of forming a tungsten nitride film in the presence of a nitrogen-containing reactant gas at a temperature of less than about 600 °C. A process for forming a tungsten nitride film by atomic layer deposition is also provided.</p> |
