METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a pattern of a semiconductor device is provided to form a pattern uniformly without using a correction pattern. CONSTITUTION: According to a method for forming a pattern of a semiconductor device, gate patterns(15) are formed perpendicularly to active patterns after forming the active patterns on a semiconductor substrate(13). After forming an interlayer dielectric(17) on the whole surface of the semiconductor substrate to cover the gate patterns, mask patterns are formed on the interlayer dielectric perpendicularly to the gate pattern. After increasing the space between the mask patterns by wet-etching the mask patterns, a contact hole revealing the semiconductor substrate is formed by etching the interlayer dielectric between the gate patterns by a self-align method using the mask patterns with increased space as an etch mask. And after removing the mask patterns, a conductive layer is formed to fill the contact hole. A conductive pad(25) separated by the interlayer dielectric is formed by polishing the conductive layer and the interlayer dielectric with a CMP(Chemical Mechanical Polishing). The wet etching of the mask pattern is performed using HF or NH4F solution and the mask patterns are formed in a pillar shape. Because the conductive pad is formed after etching the interlayer dielectric using the pillar mask patterns as an etching mask, the conductive pad is formed uniformly without a correction pattern.