SENSE AMP IN SEMICONDUCTOR MEMORY

摘要

PURPOSE: A sense amplifier of a semiconductor memory is provided to overcome the operational limit of low-power dissipation system due to a threshold voltage of transistors by replacing transistors with capacitors. CONSTITUTION: The sense amplifier of the semiconductor memory includes at least one bit line pair and a sense amplifier. The bit line pair includes a bit line(BL) to which the first memory cell is coupled and a bit line bar(/BL) to which the second memory cell is coupled and receives a precharge voltage corresponding to a half of a power source as an initial value. The sense amplifier is coupled with the bit line and the bit line bar. The first and second switches are coupled in series between the bit line and the bit line bar. A sense amplifier control signal is input between the first and the second switches. The first and the second capacitors are coupled in series between the bit line and the bit line bar. A boost signal(BST) is input between the first and the second capacitors. One terminal of the first switch is coupled with the bit line and one terminal of the second switch is coupled with the bit line bar. A control node of the first switch is coupled with the bit line bar. A control node of the second switch is coupled with the bit line.