发明名称 |
METHOD FOR PREPARINF SINGLE CRYSTAL THIN FILM |
摘要 |
PURPOSE: A method for preparing a single crystal thin film is provided which is improved uniformity of etching during manufacturing semiconductor integrated circuits and reliability of product. CONSTITUTION: A method for preparing a single crystal thin film comprises; the process for preparing the first single crystal board; the process for growing the first single crystal board and the other single thin-film, which is different in chemical character, in the first single crystal board using the epitaxial growth technique; and the process for separating the single crystal thin film from the first single crystal board.
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申请公布号 |
KR20000052296(A) |
申请公布日期 |
2000.08.16 |
申请号 |
KR19990027297 |
申请日期 |
1999.07.07 |
申请人 |
HESED TECHNOLOGY CO., LTD. |
发明人 |
CHUN, YOUNG KWEUN |
分类号 |
C30B15/00;(IPC1-7):C30B15/00 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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