发明名称 METHOD FOR PREPARINF SINGLE CRYSTAL THIN FILM
摘要 PURPOSE: A method for preparing a single crystal thin film is provided which is improved uniformity of etching during manufacturing semiconductor integrated circuits and reliability of product. CONSTITUTION: A method for preparing a single crystal thin film comprises; the process for preparing the first single crystal board; the process for growing the first single crystal board and the other single thin-film, which is different in chemical character, in the first single crystal board using the epitaxial growth technique; and the process for separating the single crystal thin film from the first single crystal board.
申请公布号 KR20000052296(A) 申请公布日期 2000.08.16
申请号 KR19990027297 申请日期 1999.07.07
申请人 HESED TECHNOLOGY CO., LTD. 发明人 CHUN, YOUNG KWEUN
分类号 C30B15/00;(IPC1-7):C30B15/00 主分类号 C30B15/00
代理机构 代理人
主权项
地址