| 摘要 |
<p>The multilevel memory (50) stores words formed by a plurality of binary subwords in a plurality of cells (63a-63p), each cell having has a respective threshold value. The cells are arranged on cell rows and columns, are grouped into sectors (56) divided into sector blocks (57), and are selected via a global row decoder (51), a global column decoder (54), and a plurality of local row decoders (58), which simultaneously supply a ramp voltage (VR) to a biasing terminal of the selected cells. Threshold reading comparators (72a, 72b) are connected to the selected cells, and generate threshold attainment signals when the ramp voltage reaches the threshold value of the selected cells; switches (65a-65d), are arranged between the global word lines (52) and local word lines (59a-59d, 60a-60d), opening of the switches is individually controlled by the threshold attainment signals, thereby the local word lines are maintained at a the threshold voltage of the respective selected cell, after opening of the switches. <IMAGE></p> |
