| 摘要 |
PURPOSE: A fabrication method of a laser diode is to prevent a peeling of SiO2 oxidation mask. CONSTITUTION: A laser diode manufacturing method comprises the steps of: growing a first cladding layer(230), an active layer, and a second cladding layer in this order on a substrate; growing an etch blocking layer and a capping layer in this order on the second cladding layer; forming an oxidation mask on the capping layer in a predetermined direction, a first mesa etching the capping layer by using a first etchant, and a second mesa etching the remained layers by using a second etchant; growing a current blocking layers(242,244) and a current blocking protection layer(246) in this order on the resultant material; etching the oxidation mask, the capping layer, the etch blocking layer, and the current blocking protection layer in this order; and growing a contact layer and a ohmic contact layer(248) in this order on the resultant material. |
