DEVICE FOR LASER OF BURIED HETERO-STRUCTURE USING POLYIMIDE COATING

摘要

PURPOSE: A device for laser of buried heterostructure using polyimide coating is provided to enable users to simplify the manufacturing process of laser without having to deal with current leakage by forming a current blocking layer after mesa etch and coating the polyimide. CONSTITUTION: A device for laser of buried Hetero-structure using polyimide coating includes the following steps. Growing an epitaxial layer(B,C,D,E layers) of double heterostructure on an InP substrate(A). Forming mesa(100) using HBr section etching liquid after forming a Si3N4stripe on the outside of Si3N4. Etching the outside of the polyimide until the F layer(Si3N4) is revealed after forming a Si3N4 stripe on the outside part of Si3N4. Evaporating Ti/Pt/Au on the last layer of E layer. Annealing the InP substrate(A) under 400 after evaporating Ti/Pt/Au. The device enable users to reduce the time of manufacturing BH laser diode by not having to adjust the thickness, density of mesa(100).