MULTI-LEVEL SENSE AMPLIFIER OF FLASH MEMORY

摘要

PURPOSE: A multi-level sense amplifier of a flash memory is provided to reduce a data read sensing error by maintaining the same offset in a program and read operation by a sense amplifier. CONSTITUTION: A main cell sense amplifier(400) performs a data read operation or a program operation in the same path. a bias switching unit(700) switches so that the read operation or the program operation of the main cell sense amplifier(400) can be done in the same path. A program reference cell sense amplifier(600) generates a reference voltage by means of an external reference voltage and stores it, and outputs the reference voltage by a program reference cell word line signal. A read reference cell sense amplifier(500) stores the output signal of the program reference cell sense amplifier(600) as a read reference data by a reference cell word line signal.