发明名称 Charge pump circuit with bypass transistor
摘要 <p>A two stage charge pump circuit can perform either a two stage boosting operation or a single stage boosting operation. The charge pump circuit includes first, second and third gate transistors (T11-T13) connected in series between first and second supply voltages, and a bypass transistor (TB). A first booster stage (12) includes a capacitor (C11) connected between the first and second gate (T11, T12) transistors and a drive circuit. A second booster stage (12) includes a capacitor (C12) connected between second and third gate transistors (T12, T13) and the drive circuit. The third gate transistor (T13) is connected to an internal bus which provides an output voltage to other circuit elements connected to it. The bypass transistor is connected between the first booster stage and the internal bus. &lt;IMAGE&gt;</p>
申请公布号 EP1028517(A2) 申请公布日期 2000.08.16
申请号 EP19990307827 申请日期 1999.10.05
申请人 FUJITSU LIMITED 发明人 KOBAYASHI, ISAMU;KATO, YOSHIHARU
分类号 G11C5/14;G11C11/407;H02M3/07;(IPC1-7):H02M3/07 主分类号 G11C5/14
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