| 摘要 |
PURPOSE: An over drive circuit of a semiconductor memory is provided to over-drive while raising maximum area efficiency in a small interaction region by driving a sense amplifier at a power supply voltage level and a drive voltage level by a single driving unit. CONSTITUTION: A memory cell array (1) stores a data. A sense amplifier array (2) amplifier and outputs information of the memory cell (1). A sub-word driving unit (30) drives a sub-word line. A voltage applying unit (4) applies a voltage to the sense amplifier array (2) to be driven. An applied voltage selecting unit (100) selectively applies a power supply voltage or a driving voltage to the voltage applying unit (4). The applied voltage selecting unit (100) includes a PMOS transistor (PM1) for receiving a high voltage at its source, an NMOS transistor (NM3) being serially connected with the PMOS transistor (PM1), receiving the driving voltage at its source and over-drive signal at its gate, an NMOS transistor (NM1) for receiving the power supply voltage at its drain, having a gate connected with a common contacting point of the two transistors (NM3, PM1) and a source being connected with the voltage applying unit (4).and an NMOS transistor (NM2) having a drain to which the driving voltage is applied, a gate to which the over-drive signal is applied and a source commonly connected with the source of the NMOS transistor (NM1).
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