| 摘要 |
PURPOSE: A method for forming mesa of buried hetero-structure laser diode is provided to form mesa more largely on the upper part than the lower part by etching with mixed etching liquid composed of HBr, H2O2, H2O, and HCI so as to enable users to produce mesa of buried hetero-structure laser diode. CONSTITUTION: A method for forming mesa of buried hetero-structure laser diode includes the following steps. Growing epitaxial layers(B,C,D,E layers) of double hetero-structure on a InP substrate(A). Eliminating E layer which is the cap layer and cooling down Si3N4 film. Forming mesa(100) by using mixed etching liquid made out of HBr, H2O2, H2O, and HCI. Forming a current blocking layer on each side of a(n-InP) and b(p-InP). Evaporating Ti/Pt/Au from the top of mesa(100) and current blocking layer after eliminating Si3N4 stripe on the top of mesa(100). Annealing under 400 after evaporating Ti/Pt/Au from the InP substrate(A) by grinding the InP substrate(A) to make the thickness to become 100-120 micro meter. The device prevents any possible current leakage from occurring using the thick current blocking layer formed on both sides of the mesa(100).
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