POLY SILICON THIN FILM TRANSISTOR FOR PIXEL FORMATION AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A poly silicon thin film transistor for a pixel formation and a fabricating method thereof are provided to prevent an electron and a hole from being stacked on a channel to stabilize a poly silicon TFT characteristics. CONSTITUTION: A gate line(40a) and a data line(44a) on which a gate signal and a data signal are respectively applied are composed. A common electrode line(42a) is respectively composed for the gate line. A poly silicon thin film transistor of which a gate and a source are respectively connected to the gate line and the data line is connected. A predetermined part of the main body of the thin film transistor is electrically connected to the common electrode line through a predetermined connecting line. The drain of the poly silicon thin film transistor connected to a pixel electrode(46) is opposite to the common electrode line to form a storage capacitor.